研究方向

GaN基功率器件研制与器件物理研究；

GaN基宽禁带半导体外延生长研究。

个人简介

冯玉霞，副教授，硕士研究生导师。

主要从事宽禁带半导体氮化镓（GaN）外延生长及其电子器件研究，以项目负责人主持国家自然科学基金面上项目、青年项目、中国博士后科学基金等科研项目。发表SCI论文20余篇，申请国家发明专利16项。

教育简历

2010.09-2015.06，中科院半导体所，博士

2006.09-2010.07，河北工业大学，学士

工作履历

2022年-至今，北京工业大学，信息科学技术学院，副教授

2019.07-2022，北京工业大学，微电子学院，讲师

2015.07-2019.06，北京大学，物理学院，博士后

课程教学

本科生教学：固体物理学、高级语言程序设计课设

科研项目

国家自然科学基金面上项目，2021-2024，主持

国家自然科学基金青年项目，2019-2020，主持

代表性研究成果

[1] Yuxia Feng, Xuelin Yang*, Zhihong Zhang, Duan Kang, Jie Zhang, Kaihui Liu*, Xinzheng Li, Jianfei Shen, Fang Liu, Tao Wang, Panfeng Ji, Fujun Xu, Ning Tang, Tongjun Yu, Xinqiang Wang, Dapeng Yu, Weikun Ge, and Bo Shen*, Epitaxy of single-crystalline GaN film on CMOS-compatible Si (100) substrate buffered by graphene, Advanced Functional Materials, 29, 1905056, 2019.

[2] Yuxia Feng, Huarui Sun, Xuelin Yang*, Kang Liu, Jie Zhang, Jianfei Shen, Danshuo Liu, Zidong Cai, Fujun Xu, Ning Tang, Tongjun Yu, Xinqiang Wang, Weikun Ge, and Bo Shen*, High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer, Applied Physics Letters, 118, 052104, 2021.

[3] Yuxia Feng, Xueling Yang*, Zhihong Zhang, Jie Zhang, Jiaqi Wei, Lixing Zhou, Kaihui Liu, Fujun Xu, Weikun Ge, and Bo Shen*, Epitaxial growth mechnisms of single-crystalline GaN on single-crystalline graphene, CrystEngComm, 23, 5451, 2021.

[4] Xiaoguang He✝, Yuxia Feng✝, Xuelin Yang*, Shan Wu, Zidong Cai, Jia Wei, Jianfei Shen, Huayang Huang, Danshuo Liu, Zheng Hao Chen, Cheng Ma, Weikun Ge, and Bo Shen*, Step-graded AlGaN vs superlattice: role of strain relief layer in dynamic on-resistance degradation, Applied Physics Express, 15, 011001, 2022.

[5] Yuxia Feng, Xuelin Yang*, Jianpeng Cheng, Jie Zhang, Panfeng Ji, Jianfei Shen, Anqi Hu, Fujun Xu, Tongjun Yu, Xinqiang Wang, and Bo Shen*, Anisotropic strain relaxation and high quality AlGaN.GaN heterostructures on Si (110) substrates, Applied Physics Letters, 110, 192104, 2017.

[6] Yuxia Feng, Hongyuan Wei*, Shaoyang Yang*, Zhen Chen, Lianshan Wang, Susu Kong, Guijuan Zhao, and Xianglin Liu, Competitive growth mechanisms of AlN on Si (111) by MOVPE, Scientific Reports, 4, 6416, 2014.

[7] Yuxia Feng, Hongyuan Wei, Shaoyan Yang*, Heng Zhang, Susu Kong, Guijuan Zhao, and Xianglin Liu, Significant quality improvement of GaN on Si (111) upon formation of an AlN defective layer, CrystEngComm, 16, 7525, 2014.

[8] Yuxia Feng, Guipeng Liu, Shaoyan Yang*, Hongyuan Wei, Xianglin Liu, Qinsheng Zhu, and Zhanguo Wang, Interface roughness scattering considering the electrical field fluctuation in undoped AlGaN/GaN heterostructures, Semiconductor Science and Technology, 29, 045015, 2014.